Atomic structure and oxygen deficiency of the ultrathin aluminium oxide barrier in Al/AlOx/Al Josephson junctions

نویسندگان

  • Lunjie Zeng
  • Dung Trung Tran
  • Cheuk-Wai Tai
  • Gunnar Svensson
  • Eva Olsson
چکیده

Al/AlOx/Al Josephson junctions are the building blocks of a wide range of superconducting quantum devices that are key elements for quantum computers, extremely sensitive magnetometers and radiation detectors. The properties of the junctions and the superconducting quantum devices are determined by the atomic structure of the tunnel barrier. The nanoscale dimension and disordered nature of the barrier oxide have been challenges for the direct experimental investigation of the atomic structure of the tunnel barrier. Here we show that the miniaturized dimension of the barrier and the interfacial interaction between crystalline Al and amorphous AlOx give rise to oxygen deficiency at the metal/oxide interfaces. In the interior of the barrier, the oxide resembles the atomic structure of bulk aluminium oxide. Atomic defects such as oxygen vacancies at the interfaces can be the origin of the two-level systems and contribute to decoherence and noise in superconducting quantum circuits.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Oxygen stoichiometry and instability in aluminum oxide tunnel barrier layers

We present x-ray photoelectron spectroscopy data that show that the chemisorbed oxygen previously observed to be on the surface of thin AlOx layers formed by room temperature thermal oxidation is bound by oxygen vacancies in the oxide. Increasing the electric field across the oxide, either by overcoating with a metallic electrode, or by electron bombardment, drives this surface chemisorbed oxyg...

متن کامل

Microscopic model of critical current noise in Josephson junctions.

We present a simple microscopic model to show how fluctuating two-level systems in a Josephson junction tunnel barrier of thickness L can modify the potential energy of the barrier and produce critical current noise spectra. We find low frequency 1/f noise that goes as L5. Our values are in good agreement with recent experimental measurements of critical current noise in Al/AlOx/Al Josephson ju...

متن کامل

The oxidation state at tunnel junction interfaces

The oxidation state at the interfaces of Nb/Al–AlOx/Pb junctions is discussed. Conductance–voltage curves below and above the superconducting temperature suggest tunneling conduction, while X-ray photoelectron spectroscopy shows the existence of a thin AlOx layer at the Nb/Al interface. We demonstrate that at the usual 10 7 Torr range of base pressures in the sputtering chamber, this is due to ...

متن کامل

Integrating atomic layer deposition and ultra-high vacuum physical vapor deposition for in situ fabrication of tunnel junctions.

Atomic Layer Deposition (ALD) is a promising technique for growing ultrathin, pristine dielectrics on metal substrates, which is essential to many electronic devices. Tunnel junctions are an excellent example which require a leak-free, ultrathin dielectric tunnel barrier of typical thickness around 1 nm between two metal electrodes. A challenge in the development of ultrathin dielectric tunnel ...

متن کامل

Improved Critical-Current-Density Uniformity of Nb Superconducting Fabrication Process Using Anodization Personnel

cross-wafer standard deviation of Jc was typically ~ 5% for anodized wafers but was ≥15% for unanodized wafers (Figure 6). A low variation in Jc results in a higher yield of device chips per wafer with the desired current density. As a result of the improved cross-wafer distribution, the cross-chip uniformity is greatly improved as well; typically < 1% for anodized chips. Low cross-chip Jc vari...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره 6  شماره 

صفحات  -

تاریخ انتشار 2016